Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
Abstract Using our recently developed radical-enhanced metalorganic chemical vapor deposition (REMOCVD) technique, we have grown gallium nitride (GaN) on bulk GaN and GaN on Si templates. Three features make up this system: (1) applying very high-frequency power (60 MHz) to increase the plasma densi...
| Автори: | , , , , , , |
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| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
Nature Portfolio
2024-05-01
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| Серія: | Scientific Reports |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1038/s41598-024-61501-9 |