Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition

Abstract Using our recently developed radical-enhanced metalorganic chemical vapor deposition (REMOCVD) technique, we have grown gallium nitride (GaN) on bulk GaN and GaN on Si templates. Three features make up this system: (1) applying very high-frequency power (60 MHz) to increase the plasma densi...

Full description

Bibliographic Details
Main Authors: Arun Kumar Dhasiyan, Frank Wilson Amalraj, Swathy Jayaprasad, Naohiro Shimizu, Osamu Oda, Kenji Ishikawa, Masaru Hori
Format: Article
Language:English
Published: Nature Portfolio 2024-05-01
Series:Scientific Reports
Subjects:
Compound semiconductor
Radical enhanced metalorganic chemical vapor deposition
Gallium nitride
Growth rate
GaN/GaN power device
Online Access:https://doi.org/10.1038/s41598-024-61501-9

Internet

https://doi.org/10.1038/s41598-024-61501-9

Similar Items