Wideband dielectric properties of silicon and glass substrates for terahertz integrated circuits and microsystems
This paper presents a comprehensive study of the optical and electrical dielectric material properties of six commonly-used silicon and glass substrates at terahertz (THz) frequencies, including refractive index, absorption coefficient, dielectric constant and loss factor. The material characterizat...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2021-01-01
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| Series: | Materials Research Express |
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| Online Access: | https://doi.org/10.1088/2053-1591/abf684 |
| _version_ | 1797746613530132480 |
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| author | Nonchanutt Chudpooti Nattapong Duangrit Andrew D Burnett Joshua R Freeman Thomas B Gill Chuwong Phongcharoenpanich Ulrik Imberg Danai Torrungrueng Prayoot Akkaraekthalin Ian D Robertson Nutapong Somjit |
| author_facet | Nonchanutt Chudpooti Nattapong Duangrit Andrew D Burnett Joshua R Freeman Thomas B Gill Chuwong Phongcharoenpanich Ulrik Imberg Danai Torrungrueng Prayoot Akkaraekthalin Ian D Robertson Nutapong Somjit |
| author_sort | Nonchanutt Chudpooti |
| collection | DOAJ |
| description | This paper presents a comprehensive study of the optical and electrical dielectric material properties of six commonly-used silicon and glass substrates at terahertz (THz) frequencies, including refractive index, absorption coefficient, dielectric constant and loss factor. The material characterization techniques used in this paper feature THz time-domain transmission and reflection spectroscopy with the measurement frequencies from 0.5 THz up to a maximum of 6.5 THz. Of the six selected dielectric and semiconductor substrates, two are silicon wafers with resistivities ranging from 0.001 to 0.02 Ω-cm. From the measurement results, loss tangents of the selected silicon wafers range from 0.680 to 5.455 and the dielectric constants are from 1.079 to 17.735. The four other wafers are all glass-based substrates: D263 glass, Borofloat 33 glass, fused silica and Sapphire. From the measurements, it is found that the THz dielectric properties vary considerably between the substrate samples e.g. dielectric constants range from 1.925 to 3.207 while loss tangents are from 0.042 × 10 ^−3 to 0.127. Most of the selected silicon and glass-based substrates are quite useful for many THz applications, e.g., THz integrated circuits (THz ICs), THz microsystem technologies (THz MSTs) and THz system-on-a-chip (THz SoC) and system-on-substrate (SiP). |
| first_indexed | 2024-03-12T15:40:19Z |
| format | Article |
| id | doaj.art-93179d49b1fb41fea97c885203b47c19 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:40:19Z |
| publishDate | 2021-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-93179d49b1fb41fea97c885203b47c192023-08-09T16:01:53ZengIOP PublishingMaterials Research Express2053-15912021-01-018505620110.1088/2053-1591/abf684Wideband dielectric properties of silicon and glass substrates for terahertz integrated circuits and microsystemsNonchanutt Chudpooti0https://orcid.org/0000-0002-7239-9968Nattapong Duangrit1https://orcid.org/0000-0003-2617-8627Andrew D Burnett2https://orcid.org/0000-0003-2175-1893Joshua R Freeman3Thomas B Gill4Chuwong Phongcharoenpanich5https://orcid.org/0000-0002-2057-3127Ulrik Imberg6https://orcid.org/0000-0002-5936-1260Danai Torrungrueng7https://orcid.org/0000-0003-4672-2343Prayoot Akkaraekthalin8https://orcid.org/0000-0001-6520-0765Ian D Robertson9https://orcid.org/0000-0003-1522-2071Nutapong Somjit10https://orcid.org/0000-0003-1981-2618School of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, ThailandFaculty of Engineering, Rajamangala University of Technology Lanna , Chiang Mai 50300, ThailandSchool of Chemistry, University of Leeds , Leeds LS2 9JT, United KingdomSchool of Electronic and Electrical Engineering, University of Leeds , Leeds LS2 9JT, United KingdomSchool of Electronic and Electrical Engineering, University of Leeds , Leeds LS2 9JT, United KingdomSchool of Engineering, King Mongkut’s Institute of Technology Ladkrabang, Bangkok 10520, ThailandHuawei Technologies Sweden AB, 164 40 Kista, SwedenResearch Center of Innovation Digital and Electromagnetic Technology (iDEMT), Faculty of Technical Education, King Mongkut’s University of Technology North Bangkok , Bangkok 10800, ThailandFaculty of Engineering, King Mongkut’s University of Technology North Bangkok , Bangkok 10800, ThailandSchool of Electronic and Electrical Engineering, University of Leeds , Leeds LS2 9JT, United KingdomSchool of Electronic and Electrical Engineering, University of Leeds , Leeds LS2 9JT, United KingdomThis paper presents a comprehensive study of the optical and electrical dielectric material properties of six commonly-used silicon and glass substrates at terahertz (THz) frequencies, including refractive index, absorption coefficient, dielectric constant and loss factor. The material characterization techniques used in this paper feature THz time-domain transmission and reflection spectroscopy with the measurement frequencies from 0.5 THz up to a maximum of 6.5 THz. Of the six selected dielectric and semiconductor substrates, two are silicon wafers with resistivities ranging from 0.001 to 0.02 Ω-cm. From the measurement results, loss tangents of the selected silicon wafers range from 0.680 to 5.455 and the dielectric constants are from 1.079 to 17.735. The four other wafers are all glass-based substrates: D263 glass, Borofloat 33 glass, fused silica and Sapphire. From the measurements, it is found that the THz dielectric properties vary considerably between the substrate samples e.g. dielectric constants range from 1.925 to 3.207 while loss tangents are from 0.042 × 10 ^−3 to 0.127. Most of the selected silicon and glass-based substrates are quite useful for many THz applications, e.g., THz integrated circuits (THz ICs), THz microsystem technologies (THz MSTs) and THz system-on-a-chip (THz SoC) and system-on-substrate (SiP).https://doi.org/10.1088/2053-1591/abf684THz time-domain spectroscopymaterial characterizationdielectric propertieselectrical properties |
| spellingShingle | Nonchanutt Chudpooti Nattapong Duangrit Andrew D Burnett Joshua R Freeman Thomas B Gill Chuwong Phongcharoenpanich Ulrik Imberg Danai Torrungrueng Prayoot Akkaraekthalin Ian D Robertson Nutapong Somjit Wideband dielectric properties of silicon and glass substrates for terahertz integrated circuits and microsystems Materials Research Express THz time-domain spectroscopy material characterization dielectric properties electrical properties |
| title | Wideband dielectric properties of silicon and glass substrates for terahertz integrated circuits and microsystems |
| title_full | Wideband dielectric properties of silicon and glass substrates for terahertz integrated circuits and microsystems |
| title_fullStr | Wideband dielectric properties of silicon and glass substrates for terahertz integrated circuits and microsystems |
| title_full_unstemmed | Wideband dielectric properties of silicon and glass substrates for terahertz integrated circuits and microsystems |
| title_short | Wideband dielectric properties of silicon and glass substrates for terahertz integrated circuits and microsystems |
| title_sort | wideband dielectric properties of silicon and glass substrates for terahertz integrated circuits and microsystems |
| topic | THz time-domain spectroscopy material characterization dielectric properties electrical properties |
| url | https://doi.org/10.1088/2053-1591/abf684 |
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