Intensity of Radiative Recombination in the Germanium/Silicon Nanosystem with Germanium Quantum Dots

Intensity of Radiative Recombination in the Germanium/Silicon Nanosystem with Germanium Quantum Dots

It is shown that in a germanium/silicon nanosystem with germanium quantum dots, the hole leaving the germanium quantum dot causes the appearance of the hole energy level in the bandgap energy in a silicon matrix. The dependences of the energies of the ground state of a hole and an electron are obtai...

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Bibliographic Details
Main Authors: Sergey I. Pokutnyi, Lucjan Jacak
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Crystals
Subjects:
spatially indirect excitons
hole tunneling
electron transition
quantum dots
Online Access:https://www.mdpi.com/2073-4352/11/3/275

Internet

https://www.mdpi.com/2073-4352/11/3/275

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