Dielectric Properties and Breakdown of the Gate Oxide in the MOS Structure
The article treats the methodology of measuring the breakdown voltage on Si-based MOS structures. Identification of defects in the thin gate oxide is performed using the Weibull statistical analysis. By comparing the current and capacitance measurements on MOS structures we determined the influence...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Žilina
2010-06-01
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| Series: | Communications |
| Subjects: | |
| Online Access: | https://komunikacie.uniza.sk/artkey/csl-201002-0001_dielectric-properties-and-breakdown-of-the-gate-oxide-in-the-mos-structure.php |