Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET

Performance Analysis on Complementary FET (CFET) Relative to Standard CMOS With Nanosheet FET

For the first time, by using 3-D TCAD, the advantage of using complementary FET (CFET), which has vertically stacked nanosheet nFET and pFET with shared gate, is compared to standard CMOS with nanosheet FETs in perspective of CMOS inverter performance. The comparative study on CMOS operation was per...

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Bibliographic Details
Main Authors: Seung-Geun Jung, Dongwon Jang, Seong-Ji Min, Euyjin Park, Hyun-Yong Yu
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Complementary FET (CFET)
Nanosheet FET (NSHFET)
CMOS inverter
Technology computer-aided design~(TCAD)
3-nm technology node
Online Access:https://ieeexplore.ieee.org/document/9656560/

Internet

https://ieeexplore.ieee.org/document/9656560/

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