Microwave TFTs Made of MOCVD ZnO With ALD Al<sub>2</sub>O<sub>3</sub> Gate Dielectric

Microwave TFTs Made of MOCVD ZnO With ALD Al<sub>2</sub>O<sub>3</sub> Gate Dielectric

In this paper, we report on the demonstration of microwave ZnO thin-film transistors (TFTs) grown by metal organic chemical vapor deposition (MOCVD) on a SiO<sub>2</sub>/Si substrate. In order to realize the microwave performance ZnO TFTs grown by MOCVD, the inverted staggered type devic...

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Bibliographic Details
Main Authors: Hongyi Mi, Jung-Hun Seo, Chieh-Jen Ku, Jian Shi, Xudong Wang, Yicheng Lu, Zhenqiang Ma
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
ZnO TFT
microwave
ALD dielectric
Online Access:https://ieeexplore.ieee.org/document/7378280/

Internet

https://ieeexplore.ieee.org/document/7378280/

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