Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage

Modeling of Statistical Variation Effects on DRAM Sense Amplifier Offset Voltage

With the downscaling in device sizes, process-induced parameter variation has emerged as one of the most serious problems. In particular, the parameter fluctuation of the dynamic random access memory (DRAM) sense amplifiers causes an offset voltage, leading to sensing failure. Previous studies indic...

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Bibliographic Details
Main Authors: Kyung Min Koo, Woo Young Chung, Sang Yi Lee, Gyu Han Yoon, Woo Young Choi
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Micromachines
Subjects:
dynamic random access memory
sense amplifier
sensitivity
offset voltage
variation
threshold voltage mismatch
Online Access:https://www.mdpi.com/2072-666X/12/10/1145

Internet

https://www.mdpi.com/2072-666X/12/10/1145

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