Ultra-giant magnetoresistance in graphene-based spin valves with gate-controlled potential barriers

Pursuing larger tunnel magnetoresistance is a significant work to develop attractive spin-valve devices for high-performance read heads of hard disk drives, magnetic random access memories, and transistors. Here, we propose an ultra-giant magnetoresistance reaching higher than 40 000% at room temper...

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Bibliographic Details
Main Authors: Peng Tseng, Wen-Jeng Hsueh
Format: Article
Language:English
Published: IOP Publishing 2019-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/ab531f