Scalable Bilayer MoS2‐Based Vertically Inverted p–i–n Light‐Emitting Diodes
Abstract Herein, a vertically inverted p–i–n architecture of light‐emitting diodes (LEDs) is designed for manufacturing feasibility and demonstrated scalable bilayer MoS2‐based LEDs. A 4 inch scale bilayer MoS2 is prepared by a two‐step growth method allocating the pre‐deposition of a few‐nm thick m...
| Main Authors: | , , , |
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| 格式: | 文件 |
| 语言: | English |
| 出版: |
Wiley-VCH
2024-01-01
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| 丛编: | Advanced Materials Interfaces |
| 主题: | |
| 在线阅读: | https://doi.org/10.1002/admi.202300319 |