Phonon frequencies of a highly strained AlN layer coherently grown on 6H-SiC (0001)
Phonon frequencies of a high-quality AlN layer coherently grown on a 6H-SiC (0001) substrate are investigated by Raman scattering. Owing to the largest strain in our coherent AlN layer among heteroepitaxially grown AlN layers ever reported, phonon frequencies of the E2 (low), E2 (high), and A1 (LO)...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4974500 |