TSPEM Parameter Extraction Method and Its Applications in the Modeling of Planar Schottky Diode in THz Band

TSPEM Parameter Extraction Method and Its Applications in the Modeling of Planar Schottky Diode in THz Band

In this paper, a new method for the parameter extraction of Schottky barrier diode (SBD) is presented to eliminate the influence of parasitic parameters on the intrinsic capacitance-voltage (C-V) characteristics of the Schottky diodes at high frequencies. The method is divided into the de-embedding...

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Bibliographic Details
Main Authors: Xiaoyu Liu, Yong Zhang, Haoran Wang, Luwei Qi, Bo Wang, Jingtao Zhou, Wuchang Ding, Zhi Jin, Fei Xiao
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Electronics
Subjects:
terahertz
Schottky diodes
de-embed
parasitic research
three-dimensional electromagnetic (3D-EM) model
junction capacitance
Online Access:https://www.mdpi.com/2079-9292/10/13/1540

Internet

https://www.mdpi.com/2079-9292/10/13/1540

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