In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

In this work, we demonstrated a low current collapse normally on Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MIS-HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was performed in a specially designed chamber prior to the thermal ALD-Al<sub&...

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Bibliographic Details
Main Authors: Yannan Yang, Rong Fan, Penghao Zhang, Luyu Wang, Maolin Pan, Qiang Wang, Xinling Xie, Saisheng Xu, Chen Wang, Chunlei Wu, Min Xu, Jian Jin, David Wei Zhang
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Micromachines
Subjects:
AlGaN/GaN
in situ H-radical treatment
C–V frequency dispersion
pulse-mode stress
interface traps
MIS-HEMTs
Online Access:https://www.mdpi.com/2072-666X/14/7/1278

Internet

https://www.mdpi.com/2072-666X/14/7/1278

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