Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications

Fabrication of Low Cost and Low Temperature Poly-Silicon Nanowire Sensor Arrays for Monolithic Three-Dimensional Integrated Circuits Applications

In this paper, the poly-Si nanowire (NW) field-effect transistor (FET) sensor arrays were fabricated by adopting low-temperature annealing (600 °C/30 s) and feasible spacer image transfer (SIT) processes for future monolithic three-dimensional integrated circuits (3D-ICs) applications. Compared with...

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Bibliographic Details
Main Authors: Siqi Tang, Jiang Yan, Jing Zhang, Shuhua Wei, Qingzhu Zhang, Junjie Li, Min Fang, Shuang Zhang, Enyi Xiong, Yanrong Wang, Jianglan Yang, Zhaohao Zhang, Qianhui Wei, Huaxiang Yin, Wenwu Wang, Hailing Tu
Format: Article
Language:English
Published: MDPI AG 2020-12-01
Series:Nanomaterials
Subjects:
silicon nanowire (Si NW)
monolithic three-dimensional integrated circuits (M3D-ICs)
spacer image transfer (SIT)
sensitivity
Online Access:https://www.mdpi.com/2079-4991/10/12/2488

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https://www.mdpi.com/2079-4991/10/12/2488

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