The degradation of InGaN/GaN-based structures under the action of gamma-radiation
Background. Currently, GaN/InGaN heterostructures are the main element base of modern optoelectronics. The widespread use of InGaN-based structures causes high reliability requirements. In order to ensure high reliability of photostructures, it is necessary to understand the mechanisms of radiati...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Penza State University Publishing House
2022-12-01
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| Series: | Известия высших учебных заведений. Поволжский регион: Физико-математические науки |
| Subjects: |