Surface- and point-defect-related Raman scattering in wurtzite semiconductors excited above the band gap
We present a model for exciton-mediated first-order Raman scattering by longitudinal optical phonons in the presence of surfaces and point defects. It is consistent with the experimental data for all wurtzite structure materials investigated and reviewed here (GaN, InN, ZnO and CdS) and also explain...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2013-01-01
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| Series: | New Journal of Physics |
| Online Access: | https://doi.org/10.1088/1367-2630/15/11/113048 |