Robust sub-100 nm T-Gate fabrication process using multi-step development

We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and a tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling resist development were used to design the process, in which each resist is developed separately to optimise...

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Bibliographic Details
Main Authors: Kaivan Karami, Aniket Dhongde, Huihua Cheng, Paul M. Reynolds, Bojja Aditya Reddy, Daniel Ritter, Chong Li, Edward Wasige, Stephen Thoms
Format: Article
Language:English
Published: Elsevier 2023-06-01
Series:Micro and Nano Engineering
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2590007223000412