Robust sub-100 nm T-Gate fabrication process using multi-step development
We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and a tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling resist development were used to design the process, in which each resist is developed separately to optimise...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
Elsevier
2023-06-01
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Series: | Micro and Nano Engineering |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2590007223000412 |