Synthesis of Al quantum dots on porous silicon as an effective radiation detector using extended gate technique
In this study, porous silicon (PS) and aluminum (Al) doped porous silicon were synthesized through an electrochemical method, utilizing carefully selected parameters. The etching procedure was calibrated with a 4:1 HF/ethanol ratio, maintaining a current of 20 mA for 20 min, and incorporating 0.05 g...
| Main Authors: | , , , , , , , , |
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| פורמט: | Article |
| שפה: | English |
| יצא לאור: |
Elsevier
2024-03-01
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| סדרה: | Results in Engineering |
| נושאים: | |
| גישה מקוונת: | http://www.sciencedirect.com/science/article/pii/S2590123024002263 |