Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

Noise Spectroscopy Analysis of Ion Behavior in Liquid Gate‐All‐Around Silicon Nanowire Field‐Effect Transistor Biosensors

Abstract The transport and noise properties of fabricated, high‐performance, gate‐all‐around silicon liquid‐gated nanowire field‐effect transistor devices are investigated in different concentrations of MgCl2 solutions. The critical concentration of MgCl2 solution for charge inversion at the solid‐l...

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Bibliographic Details
Main Authors: Yongqiang Zhang, Nazarii Boichuk, Denys Pustovyi, Valeriia Chekubasheva, Hanlin Long, Mykhailo Petrychuk, Svetlana Vitusevich
Format: Article
Language:English
Published: Wiley-VCH 2023-12-01
Series:Advanced Materials Interfaces
Subjects:
equivalent input noise
GAA (gate‐all‐around)
Hooge parameter
ion behavior
nanowire field‐effect transistors
noise spectroscopy
Online Access:https://doi.org/10.1002/admi.202300585

Internet

https://doi.org/10.1002/admi.202300585

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