Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch

Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch

A 120−140 GHz frequency-switchable, very compact low-noise amplifier (LNA) fabricated in a 0.13 µm SiGe:C BiCMOS technology is proposed. A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration a...

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Bibliographic Details
Main Authors: Julio Heredia, Miquel Ribó, Lluís Pradell, Selin Tolunay Wipf, Alexander Göritz, Matthias Wietstruck, Christian Wipf, Mehmet Kaynak
Format: Article
Language:English
Published: MDPI AG 2019-09-01
Series:Micromachines
Subjects:
low-noise amplifier (LNA)
frequency-reconfigurable LNA
multimodal circuit
SiGe BiCMOS
hetero junction bipolar transistor (HBT)
RF switch
Online Access:https://www.mdpi.com/2072-666X/10/10/632

Internet

https://www.mdpi.com/2072-666X/10/10/632

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