Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures

Experimental and theoretical study on device-processing-incorporated fluorine in AlGaN/GaN heterostructures

This paper reports on an in-depth research on the etching-process induced current degradation in AlGaN/GaN heterostructures by experimental research and theoretical calculations. The channel current degrades by 60% after the etching process and recovers to 90% after thermal annealing at 400 °C. It i...

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Bibliographic Details
Main Authors: Jianxing Xu, Xiaodong Tong, Shiyong Zhang, Zhe Cheng, Lian Zhang, Penghui Zheng, Feng-Xiang Chen, Rong Wang, Yun Zhang, Wei Tan
Format: Article
Language:English
Published: AIP Publishing LLC 2020-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0005091

Internet

http://dx.doi.org/10.1063/5.0005091

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