High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. At the same time, the development of vertical devices in the three-dimensional direction has excellent...

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Bibliographic Details
Main Authors: Zhuo Chen, Huilong Zhu, Guilei Wang, Qi Wang, Zhongrui Xiao, Yongkui Zhang, Jinbiao Liu, Shunshun Lu, Yong Du, Jiahan Yu, Wenjuan Xiong, Zhenzhen Kong, Anyan Du, Zijin Yan, Yantong Zheng
Format: Article
Language:English
Published: MDPI AG 2023-06-01
Series:Nanomaterials
Subjects:
vertical nanosheet
laser annealing
recrystallization
Si cap
Online Access:https://www.mdpi.com/2079-4991/13/12/1867

Internet

https://www.mdpi.com/2079-4991/13/12/1867

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