An analytical calculation method of SiC MOSFET junction temperature based on thermal network theory and Laplace transform
Abstract In order for full utilization of the switching devices and safe continued operation of the power converter at the same time, the junction temperature of the switching devices needs to be accurately monitored without shutting down the motor drive. This paper derives an analytical junction te...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-08-01
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| Series: | IET Power Electronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/pel2.12708 |