New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device’s structure and reliability. In this study, we present a systematic analysis of the striking abnormal...

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Main Authors: Kunfeng Zhu, Peijian Zhang, Zicheng Xu, Tao Wang, Xiaohui Yi, Min Hong, Yonghui Yang, Guangsheng Zhang, Jian Liu, Jianan Wei, Yang Pu, Dong Huang, Ting Luo, Xian Chen, Xinyue Tang, Kaizhou Tan, Wensuo Chen
格式: 文件
语言:English
出版: IEEE 2023-01-01
丛编:IEEE Journal of the Electron Devices Society
主题:
Hot carrier
interface defect
current gain
1/f noise
在线阅读:https://ieeexplore.ieee.org/document/10026655/

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https://ieeexplore.ieee.org/document/10026655/

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