Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors

Generation and Storage of Random Voltage Values via Ring Oscillators Comprising Feedback Field-Effect Transistors

In this study, we demonstrate the generation and storage of random voltage values using a ring oscillator consisting of feedback field-effect transistors (FBFETs). This innovative approach utilizes the logic-in-memory function of FBFETs to extract continuous output voltages from oscillatory cycles....

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Bibliographic Details
Main Authors: Jaemin Son, Juhee Jeon, Kyoungah Cho, Sangsig Kim
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Nanomaterials
Subjects:
field-effect transistor
positive feedback loop
oscillator
physical unclonable function
random number generator
Online Access:https://www.mdpi.com/2079-4991/14/7/562

Internet

https://www.mdpi.com/2079-4991/14/7/562

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