Influence of Te-Doping on Catalyst-Free VS InAs Nanowires

Influence of Te-Doping on Catalyst-Free VS InAs Nanowires

Abstract We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on tran...

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Bibliographic Details
Main Authors: Nicholas A. Güsken, Torsten Rieger, Gregor Mussler, Mihail Ion Lepsa, Detlev Grützmacher
Format: Article
Language:English
Published: SpringerOpen 2019-05-01
Series:Nanoscale Research Letters
Subjects:
Nanowires
InAs
Te-doping
Transport
X-ray measurements
Polytypism
Online Access:http://link.springer.com/article/10.1186/s11671-019-3004-0

Internet

http://link.springer.com/article/10.1186/s11671-019-3004-0

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