Influence of Te-Doping on Catalyst-Free VS InAs Nanowires
Abstract We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on tran...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2019-05-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-019-3004-0 |
| _version_ | 1797711726777466880 |
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| author | Nicholas A. Güsken Torsten Rieger Gregor Mussler Mihail Ion Lepsa Detlev Grützmacher |
| author_facet | Nicholas A. Güsken Torsten Rieger Gregor Mussler Mihail Ion Lepsa Detlev Grützmacher |
| author_sort | Nicholas A. Güsken |
| collection | DOAJ |
| description | Abstract We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zinc blende) segment ratio if Te is provided during the growth process. Furthermore, electrical two-point measurements show that increased Te-doping causes a gain in conductivity. Two comparable growth series, differing only in As-partial pressure by about 1 × 10−5 Torr while keeping all other parameters constant, were analyzed for different Te-doping levels. Their comparison suggests that the crystal structure is strongly affected and the conductivity gain is more distinct for wires grown at a comparably higher As-partial pressure. |
| first_indexed | 2024-03-12T07:11:19Z |
| format | Article |
| id | doaj.art-95609fcab24140c1a253d672038099e2 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:11:19Z |
| publishDate | 2019-05-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-95609fcab24140c1a253d672038099e22023-09-02T23:04:54ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2019-05-0114111010.1186/s11671-019-3004-0Influence of Te-Doping on Catalyst-Free VS InAs NanowiresNicholas A. Güsken0Torsten Rieger1Gregor Mussler2Mihail Ion Lepsa3Detlev Grützmacher4Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbHPeter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbHPeter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbHPeter Grünberg Institute (PGI-10), Forschungszentrum Jülich GmbHPeter Grünberg Institute (PGI-9), Forschungszentrum Jülich GmbHAbstract We report on the growth of Te-doped catalyst-free InAs nanowires by molecular beam epitaxy on silicon (111) substrates. Changes in the wire morphology, i.e. a decrease in length and an increase in diameter have been observed with rising doping level. Crystal structure analysis based on transmission electron microscopy as well as X-ray diffraction reveals an enhancement of the zinc blende/(wurtzite+zinc blende) segment ratio if Te is provided during the growth process. Furthermore, electrical two-point measurements show that increased Te-doping causes a gain in conductivity. Two comparable growth series, differing only in As-partial pressure by about 1 × 10−5 Torr while keeping all other parameters constant, were analyzed for different Te-doping levels. Their comparison suggests that the crystal structure is strongly affected and the conductivity gain is more distinct for wires grown at a comparably higher As-partial pressure.http://link.springer.com/article/10.1186/s11671-019-3004-0NanowiresInAsTe-dopingTransportX-ray measurementsPolytypism |
| spellingShingle | Nicholas A. Güsken Torsten Rieger Gregor Mussler Mihail Ion Lepsa Detlev Grützmacher Influence of Te-Doping on Catalyst-Free VS InAs Nanowires Nanoscale Research Letters Nanowires InAs Te-doping Transport X-ray measurements Polytypism |
| title | Influence of Te-Doping on Catalyst-Free VS InAs Nanowires |
| title_full | Influence of Te-Doping on Catalyst-Free VS InAs Nanowires |
| title_fullStr | Influence of Te-Doping on Catalyst-Free VS InAs Nanowires |
| title_full_unstemmed | Influence of Te-Doping on Catalyst-Free VS InAs Nanowires |
| title_short | Influence of Te-Doping on Catalyst-Free VS InAs Nanowires |
| title_sort | influence of te doping on catalyst free vs inas nanowires |
| topic | Nanowires InAs Te-doping Transport X-ray measurements Polytypism |
| url | http://link.springer.com/article/10.1186/s11671-019-3004-0 |
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