13 μm emission InAs/AlSb quantum cascade lasers with high slope efficiency and peak output power enabled by diagonal transition design
Long wavelength InAs/AlSb quantum cascade lasers (QCLs) emitting at 13 μm, based on a diagonal transition scheme design through band structure engineering, have been grown and fabricated. This band structure engineering focuses on enhancing transition efficiency and suppressing carrier leakage. Our...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2024-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/5.0237315 |