Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Abstract 4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC w...

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Bibliographic Details
Main Authors: Wantang Wang, Xuesong Lu, Xinke Wu, Yiqiang Zhang, Rong Wang, Deren Yang, Xiaodong Pi
Format: Article
Language:English
Published: Wiley-VCH 2023-05-01
Series:Advanced Materials Interfaces
Subjects:
4H silicon carbide
chemical–mechanical polishing
material removal rate
surface roughness
Online Access:https://doi.org/10.1002/admi.202202369

Internet

https://doi.org/10.1002/admi.202202369

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