A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

A Terahertz Detector Based on Double-Channel GaN/AlGaN High Electronic Mobility Transistor

A double-channel (DC) GaN/AlGaN high-electron-mobility transistor (HEMT) as a terahertz (THz) detector at 315 GHz frequency is proposed and fabricated in this paper. The structure of the epitaxial layer material in the detector is optimized, and the performance of the GaN HEMT THz detector is improv...

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Bibliographic Details
Main Authors: Qingzhi Meng, Qijing Lin, Feng Han, Weixuan Jing, Yangtao Wang, Zhuangde Jiang
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Materials
Subjects:
terahertz detector
responsivity
noise equivalent power
double-channel
high-electron-mobility transistor
Online Access:https://www.mdpi.com/1996-1944/14/20/6193

Internet

https://www.mdpi.com/1996-1944/14/20/6193

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