Improving the Performance of Solution−Processed Quantum Dot Light−Emitting Diodes via a HfO<sub>x</sub> Interfacial Layer
One of the major obstacles in the way of high−performance quantum dot light−emitting diodes (QLEDs) is the charge imbalance arising from more efficient electron injection into the emission layer than the hole injection. In previous studies, a balanced charge injection was often achieved by lowering...
Main Authors: | , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2022-12-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/15/24/8977 |