Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

Creation of Silicon-Vacancy Color Centers in Diamond by Ion Implantation

Silicon-vacancy (SiV) centers in diamond are gaining an increased interest for application, such as in quantum technologies and sensing. Due to the strong luminescence concentrated in its sharp zero-phonon line at room temperature, SiV centers are being investigated as single-photon sources for quan...

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Bibliographic Details
Main Authors: S. Lagomarsino, A. M. Flatae, H. Kambalathmana, F. Sledz, L. Hunold, N. Soltani, P. Reuschel, S. Sciortino, N. Gelli, M. Massi, C. Czelusniak, L. Giuntini, M. Agio
Format: Article
Language:English
Published: Frontiers Media S.A. 2021-01-01
Series:Frontiers in Physics
Subjects:
diamond color centers
ion implantation
quantum emitters
single-photon sources
quantum sensors
nano-thermometry
Online Access:https://www.frontiersin.org/articles/10.3389/fphy.2020.601362/full

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https://www.frontiersin.org/articles/10.3389/fphy.2020.601362/full

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