The Impact of an Extended Gate Field Plate on the DC and RF Characteristics of a Junctionless Thin-Film Transistor
In this work, conventional and drain offset junctionless (JL) finlike thin-film transistors (FinTFTs) with and without extended gate field plate (E-GFP) are fabricated. Drain offset JL FinTFTs showed a higher breakdown voltage than that of the conventional one. By extending the GFP over the drain of...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-06-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/12/1886 |