| Summary: | In this work, conventional and drain offset junctionless (JL) finlike thin-film transistors (FinTFTs) with and without extended gate field plate (E-GFP) are fabricated. Drain offset JL FinTFTs showed a higher breakdown voltage than that of the conventional one. By extending the GFP over the drain offset region, holes were generated on the surface of the drain offset region that reduce drain resistance. Therefore, the drain offset JL FinTFT with E-GFP exhibited better on-current, breakdown, and high-frequency characteristics than the one without E-GFP. Results also show that all the noise spectral densities of various JL FinTFTs follow a 1/<i>f</i> trend and were similar in the studied frequency range.
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