ALD grown polycrystalline HfO2 dielectric layer on (−2 0 1) β-Ga2O3 for MOS capacitors
Polycrystalline HfO2 dielectrics grown on (−2 0 1) beta-gallium oxide (β-Ga2O3) using high temperature ALD process is investigated. A low capacitance–voltage (C-V) hysteresis of <60 mV is obtained, and the high quality interface is verified via the temperature-dependent C-V characterizations, sho...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2020-06-01
|
| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379720305349 |