Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Abstract High uniformity Au-catalyzed indium selenide (In2Se3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In2Se3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity o...

Full description

Bibliographic Details
Main Authors: Ya-Chu Hsu, Yu-Chen Hung, Chiu-Yen Wang
Format: Article
Language:English
Published: SpringerOpen 2017-09-01
Series:Nanoscale Research Letters
Subjects:
In2Se3
Nanowire
Rapid thermal annealing (RTA)
In situ annealing TEM
Online Access:http://link.springer.com/article/10.1186/s11671-017-2302-7

Internet

http://link.springer.com/article/10.1186/s11671-017-2302-7

Similar Items