Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature
Abstract High uniformity Au-catalyzed indium selenide (In2Se3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In2Se3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity o...
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| Format: | Article |
| Language: | English |
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SpringerOpen
2017-09-01
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| Series: | Nanoscale Research Letters |
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| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2302-7 |
| _version_ | 1797711185753145344 |
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| author | Ya-Chu Hsu Yu-Chen Hung Chiu-Yen Wang |
| author_facet | Ya-Chu Hsu Yu-Chen Hung Chiu-Yen Wang |
| author_sort | Ya-Chu Hsu |
| collection | DOAJ |
| description | Abstract High uniformity Au-catalyzed indium selenide (In2Se3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In2Se3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0.1 °C/s, the average diameters and distributions (standard deviation, SD) of In2Se3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In2Se3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials. Graphical Abstract Rapid thermal annealing (RTA) process proved that it can uniform the size distribution of Au nanoparticles, and then it can be used to grow the high uniformity Au-catalyzed In2Se3 nanowires via the vapor-liquid-solid (VLS) mechanism. Comparing with the general growth condition, the heating rate is slow, 0.1 °C/s, and the growth temperature is a relatively high growth temperature, > 650 °C. RTA pre-treated growth substrate can form smaller and uniform Au nanoparticles to react with the In2Se3 vapor and produce the high uniformity In2Se3 nanowires. The in situ annealing TEM is used to realize the effect of heating rate on Au nanoparticle formation from the as-deposited Au film. The byproduct of self-catalyzed In2Se3 nanoplates can be inhibited by lowering the precursors and growth temperatures. |
| first_indexed | 2024-03-12T07:03:19Z |
| format | Article |
| id | doaj.art-95a3578d24dd4f45b9d5258205377db9 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T07:03:19Z |
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| series | Nanoscale Research Letters |
| spelling | doaj.art-95a3578d24dd4f45b9d5258205377db92023-09-02T23:36:40ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-09-011211610.1186/s11671-017-2302-7Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low TemperatureYa-Chu Hsu0Yu-Chen Hung1Chiu-Yen Wang2Department of Material Science and Engineering, National Taiwan University of Science and TechnologyDepartment of Material Science and Engineering, National Taiwan University of Science and TechnologyDepartment of Material Science and Engineering, National Taiwan University of Science and TechnologyAbstract High uniformity Au-catalyzed indium selenide (In2Se3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In2Se3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100 °C/s. Comparing with the slower heating rate, 0.1 °C/s, the average diameters and distributions (standard deviation, SD) of In2Se3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In2Se3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials. Graphical Abstract Rapid thermal annealing (RTA) process proved that it can uniform the size distribution of Au nanoparticles, and then it can be used to grow the high uniformity Au-catalyzed In2Se3 nanowires via the vapor-liquid-solid (VLS) mechanism. Comparing with the general growth condition, the heating rate is slow, 0.1 °C/s, and the growth temperature is a relatively high growth temperature, > 650 °C. RTA pre-treated growth substrate can form smaller and uniform Au nanoparticles to react with the In2Se3 vapor and produce the high uniformity In2Se3 nanowires. The in situ annealing TEM is used to realize the effect of heating rate on Au nanoparticle formation from the as-deposited Au film. The byproduct of self-catalyzed In2Se3 nanoplates can be inhibited by lowering the precursors and growth temperatures.http://link.springer.com/article/10.1186/s11671-017-2302-7In2Se3NanowireRapid thermal annealing (RTA)In situ annealing TEM |
| spellingShingle | Ya-Chu Hsu Yu-Chen Hung Chiu-Yen Wang Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature Nanoscale Research Letters In2Se3 Nanowire Rapid thermal annealing (RTA) In situ annealing TEM |
| title | Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature |
| title_full | Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature |
| title_fullStr | Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature |
| title_full_unstemmed | Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature |
| title_short | Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature |
| title_sort | controlling growth high uniformity indium selenide in2se3 nanowires via the rapid thermal annealing process at low temperature |
| topic | In2Se3 Nanowire Rapid thermal annealing (RTA) In situ annealing TEM |
| url | http://link.springer.com/article/10.1186/s11671-017-2302-7 |
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