A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application

A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application

The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (<i>V<sub>knee</sub></i>), saturation current density (<i>I<sub>d-sa...

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Bibliographic Details
Main Authors: He Guan, Guiyu Shen, Shibin Liu, Chengyu Jiang, Jingbo Wu
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Micromachines
Subjects:
AlGaN/GaN epitaxy
HEMT
simulation
Online Access:https://www.mdpi.com/2072-666X/14/1/168

Internet

https://www.mdpi.com/2072-666X/14/1/168

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