Current crowding mediated large contact noise in graphene field-effect transistors
The performance of graphene field effect transistors is adversely affected by fluctuations in the electrical resistance at the graphene/metal interface. Here, the authors unveil the microscopic origin of such contact noise, highlighting the role of current crowding.
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2016-12-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/ncomms13703 |