Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters
Silicon carbide wafer serves as an ideal substrate material for manufacturing semiconductor devices, holding immense potential for the future. However, its ultra-hardness and remarkable chemical inertness pose significant challenges for the surface processing of wafers, and a highly efficient and da...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-06-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/7/1331 |