Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters
Silicon carbide wafer serves as an ideal substrate material for manufacturing semiconductor devices, holding immense potential for the future. However, its ultra-hardness and remarkable chemical inertness pose significant challenges for the surface processing of wafers, and a highly efficient and da...
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| Format: | Article |
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MDPI AG
2023-06-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/14/7/1331 |
| _version_ | 1797588217909739520 |
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| author | Qi Jin Julong Yuan Jianxing Zhou |
| author_facet | Qi Jin Julong Yuan Jianxing Zhou |
| author_sort | Qi Jin |
| collection | DOAJ |
| description | Silicon carbide wafer serves as an ideal substrate material for manufacturing semiconductor devices, holding immense potential for the future. However, its ultra-hardness and remarkable chemical inertness pose significant challenges for the surface processing of wafers, and a highly efficient and damage-free method is required to meet the processing requirements. In this study, atmospheric plasma processing was used to conduct point-residence experiments on silicon carbide wafers by varying process parameters such as Ar, CF<sub>4</sub>, and O<sub>2</sub> flow rate, as well as processing power and the distance between the plasma torch and the workpiece. We investigate the effects of these on the surface processing function of atmospheric plasma etching and technique for surface modification of silicon carbide wafers, evaluating the material removal rates. Then, according to the experimentally derived influence law, suitable parameter ranges were selected, and orthogonal experiments were designed to determine the optimal processing parameters that would enable rapid and uniform removal of the wafer surface. The results indicate that the volume removal rate of the plasma on the silicon carbide wafer achieves its maximum when the input power is 550 W, the processing distance between the plasma torch and workpiece is 3.5 mm, and when the Ar, CF<sub>4</sub>, and O<sub>2</sub> flow rates are 15 SLM, 70 SCCM, and 20 SCCM, respectively. |
| first_indexed | 2024-03-11T00:50:01Z |
| format | Article |
| id | doaj.art-95dd655f95054c86b59c5cb4d3c79ea5 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-11T00:50:01Z |
| publishDate | 2023-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-95dd655f95054c86b59c5cb4d3c79ea52023-11-18T20:31:54ZengMDPI AGMicromachines2072-666X2023-06-01147133110.3390/mi14071331Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing ParametersQi Jin0Julong Yuan1Jianxing Zhou2Ultra-Precision Machining Centre, Zhejiang University of Technology, Hangzhou 310014, ChinaUltra-Precision Machining Centre, Zhejiang University of Technology, Hangzhou 310014, ChinaUltra-Precision Machining Centre, Zhejiang University of Technology, Hangzhou 310014, ChinaSilicon carbide wafer serves as an ideal substrate material for manufacturing semiconductor devices, holding immense potential for the future. However, its ultra-hardness and remarkable chemical inertness pose significant challenges for the surface processing of wafers, and a highly efficient and damage-free method is required to meet the processing requirements. In this study, atmospheric plasma processing was used to conduct point-residence experiments on silicon carbide wafers by varying process parameters such as Ar, CF<sub>4</sub>, and O<sub>2</sub> flow rate, as well as processing power and the distance between the plasma torch and the workpiece. We investigate the effects of these on the surface processing function of atmospheric plasma etching and technique for surface modification of silicon carbide wafers, evaluating the material removal rates. Then, according to the experimentally derived influence law, suitable parameter ranges were selected, and orthogonal experiments were designed to determine the optimal processing parameters that would enable rapid and uniform removal of the wafer surface. The results indicate that the volume removal rate of the plasma on the silicon carbide wafer achieves its maximum when the input power is 550 W, the processing distance between the plasma torch and workpiece is 3.5 mm, and when the Ar, CF<sub>4</sub>, and O<sub>2</sub> flow rates are 15 SLM, 70 SCCM, and 20 SCCM, respectively.https://www.mdpi.com/2072-666X/14/7/1331atmospheric plasmasilicon carbide waferemoval functionvolumetric removal rate |
| spellingShingle | Qi Jin Julong Yuan Jianxing Zhou Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters Micromachines atmospheric plasma silicon carbide wafe removal function volumetric removal rate |
| title | Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters |
| title_full | Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters |
| title_fullStr | Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters |
| title_full_unstemmed | Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters |
| title_short | Surface Modification of Silicon Carbide Wafers Using Atmospheric Plasma Etching: Effects of Processing Parameters |
| title_sort | surface modification of silicon carbide wafers using atmospheric plasma etching effects of processing parameters |
| topic | atmospheric plasma silicon carbide wafe removal function volumetric removal rate |
| url | https://www.mdpi.com/2072-666X/14/7/1331 |
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