Effects of Enhancement P+ Layer on IGBT Operation
IGBT (Insulated-gate bipolar transistor), is used widely in high voltage applications, it is very important to realize the doping profile in order to understand the design and the electrical performances of such devices. The performance depends on the layer, doping, and a carrier distribution among...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2018-05-01
|
| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_175144_7723ad7088c58a59f389677524516c1c.pdf |