Effects of Enhancement P+ Layer on IGBT Operation
IGBT (Insulated-gate bipolar transistor), is used widely in high voltage applications, it is very important to realize the doping profile in order to understand the design and the electrical performances of such devices. The performance depends on the layer, doping, and a carrier distribution among...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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Unviversity of Technology- Iraq
2018-05-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_175144_7723ad7088c58a59f389677524516c1c.pdf |
| _version_ | 1797326022978306048 |
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| author | Inmar Ghazi Hayder Assafli Wail Nassir |
| author_facet | Inmar Ghazi Hayder Assafli Wail Nassir |
| author_sort | Inmar Ghazi |
| collection | DOAJ |
| description | IGBT (Insulated-gate bipolar transistor), is used widely in high voltage applications, it is very important to realize the doping profile in order to understand the design and the electrical performances of such devices. The performance depends on the layer, doping, and a carrier distribution among each layer. A specific selected layer can be added with precise properties for enhancing the device and increase the low current operate requirement. In this paper, an IGBT device is an enhanced and better performance achieved by the addition of a heavily positive doped intermediate layer. The collector current is decreased from 0.05 mA to 0.03 mA at 600 V. Decreasing the current results in higher efficient device by decreasing the amount of heat produced by the device. |
| first_indexed | 2024-03-08T06:17:38Z |
| format | Article |
| id | doaj.art-95ea8e2d5bf44d419b70b5e5312afd9e |
| institution | Directory Open Access Journal |
| issn | 1681-6900 2412-0758 |
| language | English |
| last_indexed | 2024-03-08T06:17:38Z |
| publishDate | 2018-05-01 |
| publisher | Unviversity of Technology- Iraq |
| record_format | Article |
| series | Engineering and Technology Journal |
| spelling | doaj.art-95ea8e2d5bf44d419b70b5e5312afd9e2024-02-04T17:16:03ZengUnviversity of Technology- IraqEngineering and Technology Journal1681-69002412-07582018-05-01365A58258510.30684/etj.36.5A.14175144Effects of Enhancement P+ Layer on IGBT OperationInmar Ghazi0Hayder Assafli1Wail Nassir2Department of Communications Engineering, University of Technology, Baghdad, Iraq.Department of Electrical Engineering, University of Technology, Baghdad, Iraq.Department of Communications Engineering, University of Technology, Baghdad, Iraq.IGBT (Insulated-gate bipolar transistor), is used widely in high voltage applications, it is very important to realize the doping profile in order to understand the design and the electrical performances of such devices. The performance depends on the layer, doping, and a carrier distribution among each layer. A specific selected layer can be added with precise properties for enhancing the device and increase the low current operate requirement. In this paper, an IGBT device is an enhanced and better performance achieved by the addition of a heavily positive doped intermediate layer. The collector current is decreased from 0.05 mA to 0.03 mA at 600 V. Decreasing the current results in higher efficient device by decreasing the amount of heat produced by the device.https://etj.uotechnology.edu.iq/article_175144_7723ad7088c58a59f389677524516c1c.pdfheavily dopedsymmetric blockingenhancement |
| spellingShingle | Inmar Ghazi Hayder Assafli Wail Nassir Effects of Enhancement P+ Layer on IGBT Operation Engineering and Technology Journal heavily doped symmetric blocking enhancement |
| title | Effects of Enhancement P+ Layer on IGBT Operation |
| title_full | Effects of Enhancement P+ Layer on IGBT Operation |
| title_fullStr | Effects of Enhancement P+ Layer on IGBT Operation |
| title_full_unstemmed | Effects of Enhancement P+ Layer on IGBT Operation |
| title_short | Effects of Enhancement P+ Layer on IGBT Operation |
| title_sort | effects of enhancement p layer on igbt operation |
| topic | heavily doped symmetric blocking enhancement |
| url | https://etj.uotechnology.edu.iq/article_175144_7723ad7088c58a59f389677524516c1c.pdf |
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