A 3-GS/s RF Track-and-Hold Amplifier Utilizing Body-Biasing With >55-dBFS SNR and >67-dBc SFDR Up to 3 GHz in 22-nm CMOS SOI

In this article, a 3-GS/s time-interleaved (TI) RF track-and-hold (TaH) amplifier designed in a 22-nm SOI technology is presented. The TaH amplifier is designed to drive an ADC, which can be either two pipeline-ADCs or two rows of SAR-ADCs. Both TI TaH are driven by a single RF-matched wide-band bul...

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Bibliographic Details
Main Authors: Enne Wittenhagen, Patrick James Artz, Philipp Scholz, Friedel Gerfers
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Open Journal of the Solid-State Circuits Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9928330/