A 3-GS/s RF Track-and-Hold Amplifier Utilizing Body-Biasing With >55-dBFS SNR and >67-dBc SFDR Up to 3 GHz in 22-nm CMOS SOI

In this article, a 3-GS/s time-interleaved (TI) RF track-and-hold (TaH) amplifier designed in a 22-nm SOI technology is presented. The TaH amplifier is designed to drive an ADC, which can be either two pipeline-ADCs or two rows of SAR-ADCs. Both TI TaH are driven by a single RF-matched wide-band bul...

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Main Authors: Enne Wittenhagen, Patrick James Artz, Philipp Scholz, Friedel Gerfers
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Open Journal of the Solid-State Circuits Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9928330/
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author Enne Wittenhagen
Patrick James Artz
Philipp Scholz
Friedel Gerfers
author_facet Enne Wittenhagen
Patrick James Artz
Philipp Scholz
Friedel Gerfers
author_sort Enne Wittenhagen
collection DOAJ
description In this article, a 3-GS/s time-interleaved (TI) RF track-and-hold (TaH) amplifier designed in a 22-nm SOI technology is presented. The TaH amplifier is designed to drive an ADC, which can be either two pipeline-ADCs or two rows of SAR-ADCs. Both TI TaH are driven by a single RF-matched wide-band bulk-controlled front-end (FE) buffer. The measured TaH amplifier has an SFDR beyond 70 dBc up to 2.5 GHz and remains above 67 dBc till 3 GHz enabling subsampling. An overall system bandwidth of 4.5 GHz is achieved with an SNR above 55 dBFS. The ultralow-jitter clock regeneration has only 45 fs rms jitter not limiting the SNR up to 3 GHz. Two-tone and multitone measurements reveal a third intermodulation and interband nonlinearity with >72 and >82 dBFS, respectively. Off-chip calibration of offset/gain mismatch and time-skew between both TaH-lanes reduce interleaving spurs >75 dBFS utilizing a 37-tap fractional delay FIR filter. The efficient body-bias control of the technology is used to dynamically body-bias the TaH sample-switch increasing bandwidth by 10% improving settling performance while at the same time the leakage decreases. Static body-biasing is also applied to the common-mode feedback by using the bulk as a control node. The TaH amplifier including the clock generation consumes only 178 mW from a triple 2 V/0.9 V/−0.8 V supply.
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spelling doaj.art-95ff94c6aac74b3f84f06faff8d46d372024-04-22T20:40:02ZengIEEEIEEE Open Journal of the Solid-State Circuits Society2644-13492022-01-01213514310.1109/OJSSCS.2022.32170199928330A 3-GS/s RF Track-and-Hold Amplifier Utilizing Body-Biasing With >55-dBFS SNR and >67-dBc SFDR Up to 3 GHz in 22-nm CMOS SOIEnne Wittenhagen0https://orcid.org/0000-0001-8282-2128Patrick James Artz1Philipp Scholz2https://orcid.org/0000-0002-7209-3117Friedel Gerfers3https://orcid.org/0000-0002-0520-1923Chair of Mixed Signal Circuit Design, Technische Universität Berlin, Berlin, GermanyChair of Mixed Signal Circuit Design, Technische Universität Berlin, Berlin, GermanyChair of Mixed Signal Circuit Design, Technische Universität Berlin, Berlin, GermanyChair of Mixed Signal Circuit Design, Technische Universität Berlin, Berlin, GermanyIn this article, a 3-GS/s time-interleaved (TI) RF track-and-hold (TaH) amplifier designed in a 22-nm SOI technology is presented. The TaH amplifier is designed to drive an ADC, which can be either two pipeline-ADCs or two rows of SAR-ADCs. Both TI TaH are driven by a single RF-matched wide-band bulk-controlled front-end (FE) buffer. The measured TaH amplifier has an SFDR beyond 70 dBc up to 2.5 GHz and remains above 67 dBc till 3 GHz enabling subsampling. An overall system bandwidth of 4.5 GHz is achieved with an SNR above 55 dBFS. The ultralow-jitter clock regeneration has only 45 fs rms jitter not limiting the SNR up to 3 GHz. Two-tone and multitone measurements reveal a third intermodulation and interband nonlinearity with >72 and >82 dBFS, respectively. Off-chip calibration of offset/gain mismatch and time-skew between both TaH-lanes reduce interleaving spurs >75 dBFS utilizing a 37-tap fractional delay FIR filter. The efficient body-bias control of the technology is used to dynamically body-bias the TaH sample-switch increasing bandwidth by 10% improving settling performance while at the same time the leakage decreases. Static body-biasing is also applied to the common-mode feedback by using the bulk as a control node. The TaH amplifier including the clock generation consumes only 178 mW from a triple 2 V/0.9 V/−0.8 V supply.https://ieeexplore.ieee.org/document/9928330/Body-biasingcommon-mode feedback (CMFB)FD-SOIfront-end (FE)RFtime interleaving (TI)
spellingShingle Enne Wittenhagen
Patrick James Artz
Philipp Scholz
Friedel Gerfers
A 3-GS/s RF Track-and-Hold Amplifier Utilizing Body-Biasing With >55-dBFS SNR and >67-dBc SFDR Up to 3 GHz in 22-nm CMOS SOI
IEEE Open Journal of the Solid-State Circuits Society
Body-biasing
common-mode feedback (CMFB)
FD-SOI
front-end (FE)
RF
time interleaving (TI)
title A 3-GS/s RF Track-and-Hold Amplifier Utilizing Body-Biasing With >55-dBFS SNR and >67-dBc SFDR Up to 3 GHz in 22-nm CMOS SOI
title_full A 3-GS/s RF Track-and-Hold Amplifier Utilizing Body-Biasing With >55-dBFS SNR and >67-dBc SFDR Up to 3 GHz in 22-nm CMOS SOI
title_fullStr A 3-GS/s RF Track-and-Hold Amplifier Utilizing Body-Biasing With >55-dBFS SNR and >67-dBc SFDR Up to 3 GHz in 22-nm CMOS SOI
title_full_unstemmed A 3-GS/s RF Track-and-Hold Amplifier Utilizing Body-Biasing With >55-dBFS SNR and >67-dBc SFDR Up to 3 GHz in 22-nm CMOS SOI
title_short A 3-GS/s RF Track-and-Hold Amplifier Utilizing Body-Biasing With >55-dBFS SNR and >67-dBc SFDR Up to 3 GHz in 22-nm CMOS SOI
title_sort 3 gs s rf track and hold amplifier utilizing body biasing with x003e 55 dbfs snr and x003e 67 dbc sfdr up to 3 ghz in 22 nm cmos soi
topic Body-biasing
common-mode feedback (CMFB)
FD-SOI
front-end (FE)
RF
time interleaving (TI)
url https://ieeexplore.ieee.org/document/9928330/
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