Investigation of AlGaN/GaN HFET and VO<sub>2</sub> Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers

Investigation of AlGaN/GaN HFET and VO<sub>2</sub> Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers

The static and dynamic deflection transducing performances of piezotransistive AlGaN/GaN heterojunction field effect transistors (HFET) and piezoresistive VO<sub>2</sub> thin films, fabricated on GaN microcantilevers of similar dimensions, were investigated. Deflection sensitivities were...

Full description

Bibliographic Details
Main Authors: Ferhat Bayram, Durga Gajula, Digangana Khan, Goutam Koley
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Micromachines
Subjects:
microcantilever
VO<sub>2</sub>
metal insulator transition (MIT)
AlGaN/GaN
heterojunction field effect transistors (HFET)
deflection transducer
Online Access:https://www.mdpi.com/2072-666X/11/9/875

Internet

https://www.mdpi.com/2072-666X/11/9/875

Similar Items