Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors

This paper compares two in-pixel source follower stage designs for low noise CMOS image sensors embedded both on a same 5 mm by 5 mm chip fabricated in a 180nm CIS process. The presented chip embeds two pixel variants, one based on a body-effect-canceled thin oxide PMOS and the other embeds a native...

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Bibliographic Details
Main Authors: Assim Boukhayma, Andrea Kraxner, Antonino Caizzone, Minhao Yang, Daniel Bold, Christian Enz
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
CMOS
4T
CIS
conversion gain
sub-electron noise
wide dynamic
Online Access:https://ieeexplore.ieee.org/document/9863855/

Internet

https://ieeexplore.ieee.org/document/9863855/

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