Introduction of the structure, modeling and analysis of junctionless heterostructure Si/Si1-xGex transistor
In Junctionless transistors, the source-channel-drain doping is of the same type and level, hence, the process of making Junctionless transistors is easier than inverting mode transistor. Despite this benefit, reducing the transconductance of Junctionless transistors due to reduced carrier velocity...
| المؤلفون الرئيسيون: | , , , |
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| التنسيق: | مقال |
| اللغة: | fas |
| منشور في: |
Semnan University
2023-03-01
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| سلاسل: | مجله مدل سازی در مهندسی |
| الموضوعات: | |
| الوصول للمادة أونلاين: | https://modelling.semnan.ac.ir/article_7287_391cc383bb1f82e8396b1db815d3a06e.pdf |