Introduction of the structure, modeling and analysis of junctionless heterostructure Si/Si1-xGex transistor
In Junctionless transistors, the source-channel-drain doping is of the same type and level, hence, the process of making Junctionless transistors is easier than inverting mode transistor. Despite this benefit, reducing the transconductance of Junctionless transistors due to reduced carrier velocity...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | fas |
| Published: |
Semnan University
2023-03-01
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| Series: | مجله مدل سازی در مهندسی |
| Subjects: | |
| Online Access: | https://modelling.semnan.ac.ir/article_7287_391cc383bb1f82e8396b1db815d3a06e.pdf |