Improved value for the silicon free exciton binding energy
The free exciton binding energy is a key parameter in silicon material and device physics. In particular, it provides the necessary link between the energy threshold for valence to conduction band optical absorption and the bandgap determining electronic properties. The long accepted low temperature...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2013-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4828730 |