Improved value for the silicon free exciton binding energy
The free exciton binding energy is a key parameter in silicon material and device physics. In particular, it provides the necessary link between the energy threshold for valence to conduction band optical absorption and the bandgap determining electronic properties. The long accepted low temperature...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2013-11-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4828730 |
| _version_ | 1818842200641896448 |
|---|---|
| author | Martin A. Green |
| author_facet | Martin A. Green |
| author_sort | Martin A. Green |
| collection | DOAJ |
| description | The free exciton binding energy is a key parameter in silicon material and device physics. In particular, it provides the necessary link between the energy threshold for valence to conduction band optical absorption and the bandgap determining electronic properties. The long accepted low temperature binding energy value of 14.7 ± 0.4 meV is reassessed taking advantage of developments subsequent to its original determination, leading to the conclusion that this value is definitely an underestimate. Using three largely independent experimental data sets, an improved low temperature value of 15.01 ± 0.06 meV is deduced, in good agreement with the most comprehensive theoretical calculations to date. |
| first_indexed | 2024-12-19T04:38:12Z |
| format | Article |
| id | doaj.art-96e8088ef28d48bbb195f52b34561cee |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-19T04:38:12Z |
| publishDate | 2013-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-96e8088ef28d48bbb195f52b34561cee2022-12-21T20:35:42ZengAIP Publishing LLCAIP Advances2158-32262013-11-01311112104112104-1510.1063/1.4828730036310ADVImproved value for the silicon free exciton binding energyMartin A. Green0Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, Australia 2052The free exciton binding energy is a key parameter in silicon material and device physics. In particular, it provides the necessary link between the energy threshold for valence to conduction band optical absorption and the bandgap determining electronic properties. The long accepted low temperature binding energy value of 14.7 ± 0.4 meV is reassessed taking advantage of developments subsequent to its original determination, leading to the conclusion that this value is definitely an underestimate. Using three largely independent experimental data sets, an improved low temperature value of 15.01 ± 0.06 meV is deduced, in good agreement with the most comprehensive theoretical calculations to date.http://dx.doi.org/10.1063/1.4828730 |
| spellingShingle | Martin A. Green Improved value for the silicon free exciton binding energy AIP Advances |
| title | Improved value for the silicon free exciton binding energy |
| title_full | Improved value for the silicon free exciton binding energy |
| title_fullStr | Improved value for the silicon free exciton binding energy |
| title_full_unstemmed | Improved value for the silicon free exciton binding energy |
| title_short | Improved value for the silicon free exciton binding energy |
| title_sort | improved value for the silicon free exciton binding energy |
| url | http://dx.doi.org/10.1063/1.4828730 |
| work_keys_str_mv | AT martinagreen improvedvalueforthesiliconfreeexcitonbindingenergy |