On Neural Networks Based Electrothermal Modeling of GaN Devices
This paper presents an efficient artificial neural network (ANN) electrothermal modeling approach applied to GaN devices. The proposed method is based on decomposing the device nonlinearity into intrinsic trapping-induced and thermal-induced nonlinearities that can be simulated by low-order ANN mode...
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| Format: | Article |
| Language: | English |
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IEEE
2019-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/8760248/ |